STD30NE06 n - channel 60v - 0.025 w - 30a - dpak stripfet ? " power mosfet preliminary data n typical r ds(on) = 0.025 w n exceptional dv/dt capability n 100% avalanche tested n low gate charge 100 o c n application oriented characterization n for tape & reel and other packaging options contact sales offices description this power mosfet is the latest development of sgs-thomson unique "single feature size ? " strip-based process. the resulting transistor shows extremely high packing density for low on- resistance, rugged avalance characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. applications n high current, high speed switching n solenoid and relay drivers n motor control, audio amplifiers n dc-dc & dc-ac converters ? internal schematic diagram july 1998 absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 60 v v dgr drain- gate voltage (r gs = 20 k w ) 60 v v gs gate-source voltage 20 v i d drain current (continuous) at t c = 25 o c30a i d drain current (continuous) at t c = 100 o c21a i dm ( ) drain current (pulsed) 120 a p tot total dissipation at t c = 25 o c55w derating factor 0.37 w/ o c dv/dt peak diode recovery voltage slope 7 v/ns t stg storage temperature -65 to 175 o c t j max. operating junction temperature 175 o c ( ) pulse width limited by safe operating area ( 1 ) i sd 20 a, di/dt 300 a/ m s, v dd v (br)dss , t j t jmax type v dss r ds(on) i d STD30NE06 60 v < 0.03 w 30 a 1 3 dpak to-252 (suffix "t4") 1/5
thermal data r thj-case rthj-amb r thc-sink t l thermal resistance junction-case max thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 2.72 100 1.5 275 o c/w oc/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 30 a e as single pulse avalanche energy (starting t j = 25 o c, i d = i ar , v dd = 25 v) 100 mj electrical characteristics (t case = 25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a v gs = 0 60 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating t c =125 o c 1 10 m a m a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 m a 234v r ds(on) static drain-source on resistance v gs = 10v i d = 15 a 0.025 0.030 w i d(on) on state drain current v ds > i d(on) x r ds(on)max v gs = 10 v 30 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * ) forward transconductance v ds > i d(on) x r ds(on)max i d =15 a 15 25 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v f = 1 mhz v gs = 0 2700 330 68 3500 450 90 pf pf pf STD30NE06 2/5
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on time rise time v dd = 30 v i d = 22 a r g =4.7 w v gs = 10 v 27 100 50 135 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =48v i d = 45 a v gs = 10 v 60 18 17 80 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 48 v i d = 45 a r g =4.7 w v gs = 10 v 20 45 72 27 60 100 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 30 120 a a v sd ( * ) forward on voltage i sd = 45 a v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 45 a di/dt = 100 a/ m s v dd = 30 v t j = 150 o c 70 210 6 ns m c a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ) pulse width limited by safe operating area STD30NE06 3/5
dim. mm inch min. typ. max. min. typ. max. a 2.2 2.4 0.086 0.094 a1 0.9 1.1 0.035 0.043 a2 0.03 0.23 0.001 0.009 b 0.64 0.9 0.025 0.035 b2 5.2 5.4 0.204 0.212 c 0.45 0.6 0.017 0.023 c2 0.48 0.6 0.019 0.023 d 6 6.2 0.236 0.244 e 6.4 6.6 0.252 0.260 g 4.4 4.6 0.173 0.181 h 9.35 10.1 0.368 0.397 l2 0.8 0.031 l4 0.6 1 0.023 0.039 == d l2 l4 1 3 == b e == b2 g 2 a c2 c h a1 detail "a" a2 detail "a" to-252 (dpak) mechanical data 0068772-b STD30NE06 4/5
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rig hts of stmicroelectroni cs. spe cification mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previou sly supplied. st microelectronics products are not authorized for use as critical compone nts in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of s tmicroelectronics ? 1998 stmicroelectronics C printed in italy C all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - france - germany - italy - japan - korea - malaysia - malta - mexico - morocco - the neth erlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. . STD30NE06 5/5
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